|
- Double stage, high performance, tower mounted QUBiC4X SiGe:C HBT amplifier
- Low Noise Figure: 1.2dB
- High gain : +30dB
- High linearity: +33dBm OIP3
- Low impedance active bias
- Narrowband:
- -3dB gain bandwidth : 865...874MHz (9MHz)
- Gain cutoff bandwidth : 861...876MHz (15MHz)
- Unconditionally stable
- Low loss, high quality Amphenol N connectors
- -35°C to +85°C operating temperature range
- Power supply: 4-6V, 150mA
- Reverse polarity protection
- ESD protection:
- RF input DC grounded
- RF output protected by fast TVS diode
|
