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- Double stage, high performance, tower mounted GaAs pseudomorphic HEMT amplifier
- Very low Noise Figure: 0.35dB
- High gain : +28dB
- High linearity: +29dBm OIP3
- Narrowband:
- -3dB gain bandwidth : 865...874MHz (9MHz)
- Gain cutoff bandwidth : 861...876MHz (15MHz)
- Unconditionally stable
- Low loss, high quality Amphenol N connectors (LNA unit)
- -35°C to +85°C operating temperature range
- DC power via Bias-T unit: 9-15V, 100mA (separate power supply required)
- Dedicated Bias-T unit with strong RF filtering in the DC path
- Reverse polarity protection
- ESD protection:
- RF input DC grounded
- RF output protected by fast TVS diode
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